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HiPerFASTTM IGBT with HiPerFRED
Buck & boost configurations
IXGN 50N60BD2 IXGN 50N60BD3
VCES IC25 VCE(sat) tfi
= 600 V = 75 A = 2.5 V = 150 ns
...BD2
Symbol VCES VCGR VGES VGEM
IGBT
...BD3
Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 250 600 60 600 150 -40 ... +150 150 -40 ... +150 V V V V
4
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms
SOT-227B, miniBLOC E 153432
2 1
IC25 IC90 ICM
A A A A W V A A W C C C
IXGN50N60BD2 1 = Emitter; 2 = Gate 3 = Collector; 4 = Diode cathode
3
SSOA VGE= 15 V, TVJ = 125C, RG = 10 W (RBSOA) Clamped inductive load, L = 30 mH PC VRRM
Diode
TC = 25C TC = 70C; rectangular, d = 50% tP z<10 ms; pulse width limited by TJ TC = 25C
IXGN50N60BD3 1 = Emitter/Diode Cathode; 2 = Gate 3 = Collector; 4 = Diode anode
IFAVM IFRM PD TJ TJM Tstg
Features * International standard package miniBLOC * Aluminium nitride isolation - high power dissipation * Isolation voltage 3000 V~ * Very high current, fast switching IGBT & FRED diode * MOS Gate turn-on - drive simplicity * Low collector-to-case capacitance * Low package inductance (< 10 nH) - easy to drive and to protect * Molding epoxies meet UL 94 V-0 flammability classification Applications * * * * AC motor speed control DC servo and robot drives DC choppers Buck converters
Case
Md Weight
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 300 g C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5 200 1 100 2.5 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages * Easy to mount with 2 screws * Space savings * High power density
98502C (8/99)
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
1-5
IXGN 50N60BD2 IXGN 50N60BD3
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 35 50 4100 VCE = 25 V, VGE = 0 V, f = 1 MHz 290 50 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 30 35 50 50 110 150 3.0 50 60 3.0 200 250 4.2 250 220 4.0 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.50 K/W 0.05 K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
Reverse Diode (FRED) Symbol IR VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) typ. max. 650 2.5 1.75 2.40 8.0 TJ = 25C 35 uA mA V V A ns 0.85 K/W
TVJ = 25C VR= VRRM TVJ = 150C IF = 60 A, TVJ = 150C Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 540 V IF = 1 A, -di/dt = 50 A/ms, VR = 30 V
TVJ = 25C
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
IXGN 50N60BD2 IXGN 50N60BD3
100
T J = 25C VGE = 15V 13V 11V 9V 7V
200 160
TJ = 25C
80
VGE = 15V 13V
11V
9V
IC - Amperes
60 40 20
5V
IC - Amperes
120
7V
80 40
5V
0 0 1 2 3 4 5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
100
1.6
T J = 125C V = 15V GE 13V 11V 9V
Fig. 2. Extended Output Characteristics
VGE = 15V
VCE (sat) - Normalized
80
1.4 1.2 1.0
IC = 25A IC = 50A
IC = 100A
IC - Amperes
60 40
7V
0.8 0.6 0.4 25
5V
20 0 0 1 2 3 4 5
50
75
100
125
150
VCE - Volts
T J - Degrees C
Fig. 3. Saturation Voltage Characteristics
100
VCE = 10V
Fig. 4. Temperature Dependence of VCE(sat)
10000
f = 1Mhz Ciss
80
Capacitance - pF
IC - Amperes
1000
60 40
TJ = 125C T J = 25C
100
Coss Crss
20 0 0 2 4 6 8 10
VGE - Volts
10 0 5 10 15 20 25 30 35 40 VCE-Volts
Fig. 5. Saturation Voltage Characteristics
Fig. 6. Junction Capacitance Curves
(c) 2000 IXYS All rights reserved
3-5
IXGN 50N60BD2 IXGN 50N60BD3
6
TJ = 125C
12
RG = 4.7
E(ON)
6 5
TJ = 125C E(ON) IC = 100A E(OFF)
12 10
5
E(ON) - millijoules
10
E(OFF) - milliJoules
E(OFF) - millijoules
4 3 2 1 0
0 20 40 60 80
E(OFF)
8 6 4 2 0 100
E(ON) - millijoules
4 3
E(ON)
8 6
IC = 50A
2 1 0
E(OFF) E(ON) IC =25A E(OFF)
4 2 0 60
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
20
IC =50A VCE = 250V
Fig. 8. Dependence of tfi and EOFF on RG.
600
100
15
IC - Amperes
VGE - Volts
dV/dt < 5V/ns
5
1
0 0 50 100 150 200 250 300
0.1 0 100 200 300 400 500
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
1
Fig. 10. Turn-off Safe Operating Area
ZthJC (K/W)
0.1
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
10
10
TJ = 125C
RG = 5.2
1
4-5
IXGN 50N60BD2 IXGN 50N60BD3
160 A 140 IF 120 4000 nC 3000
TVJ= 100C VR = 300V
80 A 60
TVJ= 100C VR = 300V
TVJ= 25C
100
Qr 2000
TVJ=100C
80
IF=120A IF= 60A IF= 30A
IRM 40
IF=120A IF= 60A IF= 30A
TVJ=150C
60 40 20 0 0 1 VF 2 V 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 1000 20
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 14 Peak reverse current IRM versus -diF/dt
20 V VFR 15 4 s
2.0
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 120 110
VFR
3
tfr
tfr IF=120A IF= 60A IF= 30A
10
2
I RM
100 0.5 5 1
Qr
90 80 0 0 200 400 600 -diF/dt 800 A/ms 1000 0
0.0 0 40 80 120 C 160 TVJ
TVJ= 100C IF = 60A
200 400
0 600 A/ms 1000 800 diF/dt
Fig. 15 Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.0385
0.001
0.0001 0.00001
DSEP 60-06A
0.0001
0.001
0.01
0.1 t
s
1
Fig. 18 Transient thermal resistance junction to case
(c) 2000 IXYS All rights reserved
5-5

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